Thermal Desorption of He Implanted into Ge
نویسندگان
چکیده
منابع مشابه
Lattice location and stability of implanted Cu in Ge
We report on emission channeling experiments using the radioactive isotope Cu implanted into single crystalline i-Ge at a dose of 2.4×10 cm. The lattice location of Cu was determined from the angulardependent β emission yield, which was measured by means of a position-sensitive detector around the <111>, <100> and <110> directions. We find that already in the as-implanted state a considerable f...
متن کاملGE – Into the Future
The GE-Portuguese Journal of Gastroenterology (formerly Jornal Português de Gastrenterologia) was created in 1994 with the main purpose of representing the Portuguese Gastroenterology. It officially represents the three main societies of Portuguese gastroenterology -The Portuguese Society of Gastroenterology, the Portuguese Society of Digestive Endoscopy and the Portuguese Association for the S...
متن کاملDefect-related infrared photoluminescence in Ge-implanted SiO2 films
SiO2 films with Ge 1 implantation at an energy of 60 keV and a dose of 1310 cm, followed by annealing at different temperature, exhibit a broad infrared photoluminescence ~PL! at room temperature under an excitation of the 514.5 nm line of Ar laser. With increasing the annealing temperature, the intensity of the infrared PL band decreases, its full width at half maximum increases, and its energ...
متن کاملLaser-induced thermal desorption analysis of the surface during Ge etching in a Cl2 inductively coupled plasma
Laser desorption laser-induced fluorescence ~LD-LIF! detection of GeCl was used to determine in situ the surface coverage of chlorine during the etching of germanium by Cl2 in an inductively coupled plasma ~ICP! reactor. The ICP operated in the dim mode for radio frequency ~rf! power &350 W and in the bright mode for higher powers. The etch rate was 3.5 mm/min with 540 W rf power and 240 V subs...
متن کاملInsights for void formation in ion-implanted Ge
a r t i c l e i n f o The formation of voids in ion-implanted Ge was studied as a function of ion implantation energy and dose. (001) Ge substrates were self-implanted at energies of 20–300 keV to doses of 1.0 × 10 13 –1.0 × 10 17 cm − 2. Transmission electron microscopy revealed clusters of voids just below the surface for implant energies ≤ 120 keV at a dose of 2.0 × 10 15 cm − 2 and complete...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2019
ISSN: 1898-794X,0587-4246
DOI: 10.12693/aphyspola.136.285